2SC937

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC937 DESCRIPTION ·High Breakdown Voltage: VCBO= 1200V(Min) ·High Reliability APPLICATIONS ·Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 2.5 A ICP Collector Current-Pulse 6 A PC Collector Power Dissipation @ TC= 25℃ 22 W TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -45~125 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC937 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.8 V ICBX Collector Cutoff Current VCB= 1200V; VEB= 1.5V 1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 IC= 2.5A, IB1= 0.8A, IB2= -1.1A; LB= 10μH 0.2 mA tf Fall Time 1.2 μs isc Website：www.iscsemi.cn 2