2SC940

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC940 DESCRIPTION ・With TO-3 package ・High current capability ・Wide area of safe operation APPLICATIONS ・For B/W TV horizontal deflection application PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature Tmb=25℃ Open emitter Open base Open collector CONDITIONS VALUE 200 90 7 7.5 15 50 150 -65~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC940 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 90 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA ; IC=0 IC=5A; IB=0.5A 7 V Collector-emitter saturation voltage 1.5 V ICBO Collector cut-off current VCB=90V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=5V 15 70 fT Transition frequency IC=0.5A ; VCE=10V 20 MHz hFE-2 Classifications O 15-35 Q 25-45 P 35-70 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC940 Fig.2 Outline dimensions 3