2SD1022

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1022 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 3A ·Low Saturation Voltage APPLICATIONS ·Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 100 100 7 5 8 0.5 1 30 150 -55~150 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 4.17 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCE(sat) VBE(sat) ICBO ICEO IEBO hFE fT PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 3A; IB= 3mA B 2SD1022 MIN TYP. MAX 1.5 2.0 0.1 0.1 5 UNIT V V mA mA mA IC= 3A; IB= 3mA B VCB= 100V; IE=0 VCE= 100V; IB=0 VEB= 7V; IC=0 IC= 3A; VCE= 3V IC= 0.5A; VCE= 10V 1500 20 30000 MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 5A, IB1= -IB2= 5mA RL= 5Ω; VBB2= 4V 2.0 5.0 3.0 μs μs μs isc Website：www.iscsemi.cn 2