2SD1023

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1023 DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-Continuous Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 200 200 7 5 8 0.5 1 30 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat ICEO ICBO IEBO hFE fT ton ts tf PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency Turn-on time Storage time Fall time IC=3A; IB=5mA RL=10Ω VBB2=4V CONDITIONS IC=3A; IB=5mA IC=3A ;IB=5mA VCE=200V; IB=0 VCB=200V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=3V IC=0.5A ; VCE=10V 1500 20 MIN TYP. 2SD1023 MAX 1.5 2.0 0.1 0.1 5 30000 UNIT V V mA mA mA MHz 2 8 5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1023 Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3