2SD1025

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1025 DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 200 200 7 8 12 0.5 1.0 50 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL RΘj-C PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=5A; IB=10mA IC=5A ;IB=10mA VCB=200V ;IE=0 VCE=200V; IB=0 VEB=7V; IC=0 IC=5A ; VCE=3V IC=0.8A ; VCE=10V 1500 20 MIN 200 TYP. 2SD1025 MAX UNIT V 1.5 2.0 0.1 0.1 5.0 30000 V V mA mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=5A IB1=- IB2=10mA RL=5Ω; VBB2=4V 2.0 8.0 5.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1025 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3