2SD1032

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1032 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 8 A PC 60 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(on) ICEO ICES IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 30mA ; IB= 0 IC= 4A; IB= 0.4A B 2SD1032 MIN 60 TYP. MAX UNIT V 1.5 2 700 400 1 40 15 250 V V μA μA mA IC= 3A ; VCE= 4V VCE= 30V ; IB= 0 VCE= 60V ; VBE= 0 VEB= 5V; IC= 0 IC= 1A ; VCE= 4V IC= 3A ; VCE= 4V Switching times ton toff Turn-On Time IC= 4A ,IB1= -IB2= 0.4A Turn-Off Time 1.4 μs 0.2 μs hFE-1 Classifications R 40-90 Q 70-150 P 120-250 isc Website：www.iscsemi.cn 2