2SD1047

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1047 DESCRIPTION ・Complement to type 2SB817 ・With TO-3PN package APPLICATIONS ・Power amplification ・Low frequency and audio band PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 160 140 6 12 15 100 150 -40~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=5mA ;IE=0 IE=5mA ;IC=0 IC=5A ;IB=0.5A IC=1A;VCE=5V VCB=80V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 60 20 15 210 MIN 140 160 6 2SD1047 TYP. MAX UNIT V V V 2.5 1.5 0.1 0.1 200 V V mA mA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=1.0A; IB1=-IB2=0.1A VCC=20V ,RL=20Ω 0.26 6.88 0.68 μs μs μs hFE-1 Classifications D 60-120 E 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1047 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon Power Transistors 2SD1047 IB=0 4