2SD1049

Inchange Semiconductor Product Specification Silicon NPN Power Transistors · 2SD1049 DESCRIPTION ・With TO-3PN package ・High current, ・High speed switching ・High reliability APPLICATIONS ・Switching regulators ・Motor controls ・High frequency inverters ・General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 120 80 7 25 5 80 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rθjc CHARACTERISTICS Thermal resistance junction to case MAX 1.55 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1049 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ;IB=0 IC=0.1mA ;IE=0 IE=0.1mA ;IC=0 IC=25A; IB=2.5A IC=25A ;IB=2.5A VCB=120V; IE=0 VEB=7V; IC=0 IC=25A ; VCE=5V 20 MIN 80 120 7 1.5 2.0 0.1 0.1 TYP. MAX UNIT V V V V V mA mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=25A IB1=-IB2=2.5A RL=3Ω;PW=20μs; Duty≤2% 1.0 2.5 0.4 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1049 Fig.2 outline dimensions 3