2SD1061

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Wide ASO(safe operating area) ・Complement to type 2SB825 APPLICATIONS ・Universal high current switching as solenoid driving, ・High speed inverter and converter. relay drivers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD1061 Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 60 50 6 7 12 40 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA ;IC=0 IC=4A, IB=0.4A VCB=40V;IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=5A ; VCE=2V IC=1A ; VCE=5V 70 30 10 MIN 50 60 6 2SD1061 TYP. MAX UNIT V V V 0.4 0.1 0.1 280 V mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=2A IB1=- IB2=0.2A VCC=20V;RL=10Ω 0.2 0.9 0.3 μs μs μs hFE-1 classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1061 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1061 4