2SD1065

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SB829 ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·Relay drivers, ·High-speed inverters, ·Converters, ·General high-current switching applications . PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD1065 Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 60 50 6 15 20 90 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1065 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA ;IC=0 IC=8A; IB=0.4A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=8A ; VCE=2V IC=1A ; VCE=5V 70 30 20 MHz MIN 50 60 6 0.18 0.4 0.1 0.1 280 TYP. MAX UNIT V V V V mA mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=2.0A; IB1=-IB2=0.2A VCC=20V;RL=10Ω 0.20 0.10 1.00 μs μs μs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1065 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1065 4