2SD1088

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1088 DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For switching igniter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-220) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 300 250 5 6 10 1 30 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1088 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=40mH 250 V VCEsat VBEsat Collector-emitter saturation voltage IC=4A;IB=0.04A IC=4A ;IB=0.04A 2.0 V Base-emitter saturation voltage 2.5 V ICBO Collector cut-off current VCB=300V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.5 mA hFE-1 DC current gain IC=2A ; VCE=2V 2000 hFE-2 DC current gain IC=4A ; VCE=2V 200 COB Collector output capacitance f=1MHz;VCB=50V 35 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1088 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1088 4 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1088 5