2SD1115

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1115 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 500(Min)@IC= 2A APPLICATIONS ·Designed for high voltage switching, igniter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICP Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 6 A PC 40 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 2A; L= 10mH, PW= 50μs; f= 50Hz IC= 0.1mA; IE= 0 MIN TYP. 2SD1115 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage 300 V V(BR)CBO Collector-Base Breakdown Voltage 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 20mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 20mA B 2.0 V ICEO Collector Cutoff Current VCE= 300V; RBE= ∞ 100 μA hFE DC Current Gain IC= 2A; VCE= 2V 500 Switching times ton Turn-on Time IC= 2A, IB1= -IB2= 20mA 1.0 μs toff Turn-Off Time 22 μs isc Website：www.iscsemi.cn 2