2SD1115K

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1115K DESCRIPTION ·With TO-220 package ·DARLINGTON APPLICATIONS ·For high voltage switching and ignitor applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 400 300 7 3 6 40 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCBO VEBO VCEsat VBEsat ICEO hFE PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain CONDITIONS IC=2A ; PW=50μs f=50Hz, L=10mH IC=0.1A ,IE=0 IE=50mA ;IC=0 IC=2A; IB=20mA IC=2A; IB=20mA VCE=300V; RBE=∞ IC=2A ; VCE=2V 500 MIN 300 400 7 2SD1115K TYP. MAX UNIT V V V 1.5 2.0 0.1 V V mA Switching times ton toff Turn-on time IC=2A;IB1=- IB2=20mA Turn-off time 22 μs 1.0 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1115K Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3