2SD1117

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1117 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= 1.2V(Max) @IC= 5A ·Wide Area of Safe Operation ·Complement to Type 2SB850 APPLICATIONS ·Designed for audio amplifier, series regulators and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 40 40 7 10 2 50 150 -55~150 UNIT V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.5 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1117 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.2 V VB E(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 μA hFE DC Current Gain IC= 2A; VCE= 5V 60 240 isc Website：www.iscsemi.cn 2