2SD1127

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1127 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 10A ·Low Saturation Voltage APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 15 A PC 50 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1127 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; RBE= ∞ 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 25mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 25mA 2.0 V ICBO Collector Cutoff Current VCB= 120V; IE=0 100 μA hFE DC Current Gain IC= 10A; VCE= 2V 1000 Switching times ton Turn-On Time IC= 5A, IB1= -IB2= 10mA 0.8 μs toff Turn-Off Time 8.0 μs isc Website：www.iscsemi.cn 2