2SD113

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD113 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·High Power Dissipation ·High Current Capability APPLICATIONS ·Audio power amplifier, power switching applications. ·DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 30 A IE Emitter Current-Continuous -30 A IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 5 A PC 200 W Tj 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 50mA; RBE= ∞ MIN TYP. 2SD113 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 10 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 15A; IB= 3A 1.5 V Base-Emitter Saturation Voltage IC= 15A; IB= 3A VCB= 50V; IE= 0 2.5 V Collector Cutoff Current 2 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 50 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 50 300 hFE-2 DC Current Gain IC= 15A; VCE= 5V 10 COB Output Capacitance IE= 0; VCB= 50V; ftest= 1.0MHz IC= 1A; VCE= 10V 400 pF fT Current-Gain—Bandwidth Product 1.5 MHz hFE-1 Classifications O 50-150 Y 100-300 isc Website：www.iscsemi.cn