2SD1133

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1133 DESCRIPTION ·Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB857 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ Junction Temperature 8 A PC 40 W TJ 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(on) ICBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 50mA ; RBE= ∞ IC= 10μA ; IE= 0 IE= 10μA ; IC= 0 IC= 2A; IB= 0.2A B 2SD1133 MIN 50 70 5 TYP. MAX UNIT V V V 1.0 1.0 1 60 35 7 320 V V μA IC= 1A ; VCE= 4V VCB= 50V ; IE= 0 IC= 1A ; VCE= 4V IC= 0.1A ; VCE= 4V IC= 0.5A ; VCE= 4V MHz hFE-1 Classifications B 60-120 C 100-200 D 160-320 isc Website：www.iscsemi.cn 2