2SD1135

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1135 DESCRIPTION ·With TO-220C package ·Complement to type 2SB859 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 80 5 4 8 40 150 -45~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=50mA; RBE=∞ IE=10μA; IC=0 IC=2 A;IB=0.2 A IC=1A ; VCE=5V VCB=80V; IE=0 IC=1A ; VCE=5V IC=0.1A ; VCE=5V IC=0; VCB=20V;f=1MHz IC=0.5A ; VCE=5V 60 35 40 10 MIN 80 5 TYP. 2SD1135 MAX UNIT V V 2.0 1.5 0.1 200 V V mA pF MHz hFE-1 classifications B 60-120 C 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1135 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1135 4