2SD1137

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1137 DESCRIPTION ·With TO-220C package ·Complement to type 2SB860 APPLICATIONS ·Low frequency power amplifier TV vertical deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -45~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 100 100 4 4 5 1.8 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1137 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=50mA; RBE=∞ MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage 100 V V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 4 V VCEsat Collector-emitter saturation voltage IC=1 A;IB=0.1 A VCE=80V; RBE=∞ 1.0 V ⎧Α ⎧Α ICEO Collector cut-off current 100 IEBO Collector cut-off current VEB=3.5V; IC=0 50 hFE-1 DC current gain IC=0.5A ; VCE=4V 50 250 hFE-2 DC current gain IC=50mA ; VCE=4V 25 350 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1137 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1137 4 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1137 5