2SD1138

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1138 DESCRIPTION ·With TO-220C package ·Complement to type 2SB861 APPLICATIONS ·Low frequency high voltage power amplifier TV vertical deflection output PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -45~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 200 150 6 2 5 1.8 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 COB PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=50mA; RBE=∞ IE=5mA; IC=0 IC=0.5 A;IB=50m A IC=50mA ; VCE=4V VCB=120V; IE=0 IC=50mA ; VCE=4V IC=0.5A ; VCE=10V IE=0 ;VCB=100V,f=1MHz 60 60 20 MIN 150 6 TYP. 2SD1138 MAX UNIT V V 3.0 1.0 1 320 V V μA pF hFE-1 classifications B 60-120 C 100-200 D 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1138 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1138 4