2SD1162

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1162 DESCRIPTION ·High DC Current Gain: hFE= 400(Min.)@IC= 2A ·High Switching Speed ·Low Collector Saturation Voltage APPLICATIONS ·Designed for high voltage, low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ VALUE 500 300 10 5 10 0.5 40 UNIT V V V A A A PC Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range 1.5 150 -55~150 W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1162 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 5mA B 1.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 2A; IB= 5mA B 2.0 V μA Collector Cutoff Current VCB= 400V; IE= 0 10 hFE-1 DC Current Gain IC= 2A ; VCE= 2V 400 3000 hFE-2 DC Current Gain IC= 3A ; VCE= 2V 100 Switching Times μs μs μs ton Turn-On Time IC= 3A; IB1= -IB2= 30mA; RL= 50Ω,VCC≈150V 1.0 ts Storage Time 12 tf Fall Time 6 hFE-1 Classifications M 400-800 L 600-1200 K 1000-3000 isc Website：www.iscsemi.cn 2