2SD1163

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1163,2SD1163A DESCRIPTION ・With TO-220 package ・Low collector saturation voltage APPLICATIONS ・TV horizontal deflection output, PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SD1163 VCBO Collector-base voltage 2SD1163A 2SD1163 VCEO Collector-emitter voltage 2SD1163A VEBO IC ICM IC(surge) PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector current-surge Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 150 6 7 10 20 40 150 -55~150 V A A A W ℃ ℃ Open emitter 350 120 V CONDITIONS VALUE 300 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1163,2SD1163A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD1163 V(BR)CEO Collector-emitter breakdown voltage 2SD1163A V(BR)EBO Emitter-base breakdown voltage 2SD1163 VCEsat Collector-emitter saturation voltage 2SD1163A VBEsat Base-emitter saturation voltage 2SD1163 ICBO Collector cut-offcurrent 2SD1163A hFE DC current gain IC=5A, IB=0.5A VCB=300V;IE=0 VCB=350V;IE=0 IC=5A ; VCE=5V 25 IC=5A, IB=0.5A 1.0 1.2 5 5 V mA mA IE=10mA ;IC=0 IC=10mA ;RBE=∞ 150 6 2.0 V V CONDITIONS MIN 120 V TYP MAX UNIT Switching times tf Fall time ICM=3.5A;IB1 =0.45A 0.5 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1163,2SD1163A Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3