2SD1180

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1180 DESCRIPTION ・With TO-126 package ・Low collector saturation voltage APPLICATIONS ・Designed for use in audio and radio frequency power amplifiers PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 120 110 5 1.5 2.5 1.2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA; IB=0 IC=100μA; IE=0 IE=100μA ; IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=120V; IE=0 VEB=3V; IC=0 IC=150mA ; VCE=5V 100 MIN 2SD1180 TYP. 110 120 5 MAX UNIT V V V 0.7 1.3 1.0 1.0 V V μA μA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1180 Fig.2 Outline dimensions 3