2SD1186

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1186 DESCRIPTION ・With TO-3 package ・High breakdown voltage ・High speed switching APPLICATIONS ・Power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 5 7 50 150 -45~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1186 TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 6 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 800 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICES Collector cut-off current VCE=1500V; RBE=0 0.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=0.3A ; VCE=5V 10 30 Switching times tf Fall time IC=4A ;IB1=0.8A; IB2=-2A 1.0 μs ts Storage time 1.0 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1186 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3