2SD1190

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1190 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 2.0A ·Low Saturation Voltage ·Complement to Type 2SB880 APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ 6 A 1.75 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat) VBE(sat) ICBO IEBO hFE fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 50mA; RBE= ∞ IC= 5mA; IE= 0 IC= 2A; IB= 4mA B 2SD1190 MIN 60 70 TYP. MAX UNIT V V 1.5 2.0 100 3.0 2000 20 V V μA mA IC= 2A; IB= 4mA B VCB= 40V; IE= 0 VEB= 5V; IC= 0 IC= 2A; VCE= 2V IC= 2A; VCE= 5V MHz Switching times Turn-on Time Storage Time Fall Time IC= 2A, IB1= -IB2= 4mA RL= 10Ω; VCC= 20V; PW= 50μs; Duty Cycle≤1% 0.6 2.7 1.6 μs μs μs ton tstg tf isc Website：www.iscsemi.cn 2