2SD1193

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1193 DESCRIPTION ・With TO-3PN package ・Complement to type 2SB883 ・High DC current gain ・High current capacity and wide ASO ・Low saturation voltage APPLICATIONS ・Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector MAX 70 60 6 15 20 70 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=50mA ;RBE=∞ MIN 2SD1193 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage 60 V V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0 70 V VCEsat Collector-emitter saturation voltage IC=7A ;IB=14mA 1.5 V VBEsat Base-emitter saturation voltage IC=7A ;IB=14mA 2.0 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 3 mA hFE DC current gain IC=7A ; VCE=2V 2000 fT Transition frequency IC=7A ; VCE=5V 20 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1193 Fig.2 outline dimensions 3