2SD1196

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1196 DESCRIPTION ・With TO-220 package ・High DC current gain. ・High current capacity and wide ASO. ・Low saturation voltage ・DARLINGTON APPLICATIONS ・Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE 110 100 6 8 12 1.75 PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -55~150 ℃ ℃ W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1196 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-offcurrent Emitter cut-offcurrent DC current gain Transition frequency CONDITIONS IC=5mA ; IE=0 IC=50mA ;RBE=∞ IC=4A, IB=8mA IC=4A, IB=8mA VCB=80V;IE=0 VEB=5V;IC=0 IC=4A ; VCE=3V IC=4A ; VCE=5V 1500 4000 20 MHz MIN 110 100 0.9 1.5 2.0 0.1 3.0 TYP MAX UNIT V V V V mA mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=500IB1=-500IB2=4A VCC=50V;RL=12.5Ω; 0.6 4.8 1.6 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1196 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3