2SD1197

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1197 DESCRIPTION ・With TO-3PN package ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage ・DARLINGTON ・Complement to type 2SB887 APPLICATIONS ・Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 110 100 6 10 15 70 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1197 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=50mA ;RBE=∞ IC=5mA ;IE=0 IC=5A; IB=10mA IC=5A; IB=10mA VCB=80V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=3V IC=5A ; VCE=5V 1500 4000 MIN TYP. MAX UNIT V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE fT Collector-emitter breakdown voltage 100 V Collector-base breakdown voltage 110 V Collector-emitter saturation voltage 0.9 1.5 V Base-emitter saturation voltage 2.0 V Collector cut-off current 0.1 mA Emitter cut-off current 3.0 mA DC current gain Transition frequency 20 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1197 Fig.2 outline dimensions 3