2SD1197

2SD1197

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SD1197 - Silicon NPN Power Transistors - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2SD1197 数据手册
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1197 DESCRIPTION ・With TO-3PN package ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage ・DARLINGTON ・Complement to type 2SB887 APPLICATIONS ・Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 110 100 6 10 15 70 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1197 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=50mA ;RBE=∞ IC=5mA ;IE=0 IC=5A; IB=10mA IC=5A; IB=10mA VCB=80V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=3V IC=5A ; VCE=5V 1500 4000 MIN TYP. MAX UNIT V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE fT Collector-emitter breakdown voltage 100 V Collector-base breakdown voltage 110 V Collector-emitter saturation voltage 0.9 1.5 V Base-emitter saturation voltage 2.0 V Collector cut-off current 0.1 mA Emitter cut-off current 3.0 mA DC current gain Transition frequency 20 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1197 Fig.2 outline dimensions 3
2SD1197
物料型号: - 型号:2SD1197

器件简介: - 2SD1197是一款硅NPN功率晶体管,具有TO-3PN封装,高直流电流增益,大电流容量和宽ASO,低饱和电压,是达林顿型晶体管,与2SB887型号互补。

引脚分配: - 引脚1:基极(Base) - 引脚2:集电极,连接到安装底(Collector;connected to mounting base) - 引脚3:发射极(Emitter)

参数特性: - 集-基电压(VCBO):110V,开发射极 - 集-发电压(VCEO):100V,开基极 - 发-基电压(VEBO):6V,开集电极 - 集电极直流电流(Ic):10A - 集电极脉冲电流(Icp):15A - 集电极功率耗散(Pc):70W,Tc=25°C - 结温(Tj):150℃ - 存储温度(Tstg):-55~150℃

功能详解: - 2SD1197适用于电机驱动、打印机锤驱动、继电器驱动和电压调节控制等应用。

应用信息: - 应用领域包括电机驱动、打印机锤驱动、继电器驱动和电压调节控制。

封装信息: - 封装类型:TO-3PN - 封装图示已提供,展示了简化外形和符号。
2SD1197 价格&库存

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