2SD1208

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1208 DESCRIPTION ・With TO-3 package ・Wide area of safe operation ・High DC current gain ・Darlington APPLICATIONS ・Power regulator for line operated TV PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 60±15 60±15 6 5 20 100 150 -65~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1208 MAX UNIT VCEO Collector-emitter breakdown voltage IC=100mA ;IB=0 45 75 V VCBO Collector-base breakdown voltage IC=100mA ;IE=0 45 75 V VCEsat-1 Collector-emitter saturation voltage IC=0.5A ;IB=1mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=1A; IB=1mA 2.5 V VBE Base-emitter on voltage IC=0.5A;VCE=5V 1.8 V IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=0.5A ; VCE=5V 2000 20000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1208 Fig.2 outline dimentions 3