2SD1212

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Large current capacity. ・Complement to type 2SB903 APPLICATIONS ・Suitable for relay drivers, high-speed inverters,converters, and other general large current switching applications. ・High-speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD1212 Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE 60 30 6 12 20 1.75 PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 35 150 -55~150 ℃ ℃ W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-offcurrent Emitter cut-offcurrent DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ; IE=0 IC=1mA ;RBE=∞ IE=1mA ; IC=0 IC=5A, IB=0.25A VCB=40V;IE=0 VEB=4V;IC=0 IC=1A ; VCE=2V IC=6A ; VCE=2V IC=1A ; VCE=5V 70 30 120 MIN 60 30 6 TYP 2SD1212 MAX UNIT V V V 0.4 0.1 0.1 280 V mA mA MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=5A ;IB1=0.5A IB2=-0.5A; 0.20 0.50 0.03 μs μs μs hFE-1 classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1212 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1212 4