2SD1213

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1213 DESCRIPTION ・With TO-3PN package ・Low collector saturation voltage ・Large current capacity. ・Complement to type 2SB904 APPLICATIONS ・Large current switching of relay drivers, high-speed inverters, converters. PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PN) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2.5 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 60 30 6 20 30 60 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=∞ IC=1mA; IE=0 IE=1mA; IC=0 IC=8A; IB=0.4A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=10A ; VCE=2V IC=1A ; VCE=5V 70 30 MIN 30 60 6 2SD1213 TYP. MAX UNIT V V V 0.4 0.1 0.1 280 V mA mA 120 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=10A;IB1=-IB2=-0.5A VCC=10V ;RL=1Ω 0.3 0.6 0.02 μs μs μs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1213 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3