2SD1235

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1235 DESCRIPTION ·With TO-220C package ·Complement to type 2SB919 ·Low collector saturation voltage ·Large current capacity. APPLICATIONS ·Large current switching of relay drivers, high-speed inverters,converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak TC=25℃ PC Collector dissipation 1.75 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 60 30 6 8 15 30 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA; IC=0 IC=3A; IB=0.15A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=4A ; VCE=2V IC=1A ; VCE=5V 70 30 MIN 30 60 6 2SD1235 TYP. MAX UNIT V V V 0.4 100 100 280 V μA μA 120 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=20IB1=-20IB2=4A VCC=10V,RL=2.5Ω 0.1 0.5 0.03 μs μs μs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1235 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1235 4