INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1248
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·Low Collector Saturation Voltage
APPLICATIONS ·Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current-Peak
12
A
PC
Collector Power Dissipation @ TC=25℃
40
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SD1248
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 25mA; RBE= ∞
120
V
V(BR)EBO
Emitter -Base Breakdown Voltage
IE= 100mA; IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 4A; IB= 8mA
B
1.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 8A; IB= 80mA
B
3.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 4A; IB= 8mA
B
2.0
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 8A; IB= 80mA
B
3.5
V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
100
μA
ICEO
Collector Cutoff Current
VCE= 100V; RBE= ∞
10
μA
hFE
DC Current Gain
IC= 4A; VCE= 3V
1000
20000
VECF
C-E Diode Forward Voltage
IF= 8A
3.0
V
isc Website:www.iscsemi.cn
2
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