2SD1263A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1263 2SD1263A DESCRIPTION ·With TO-220Fa package ·High breakdown voltalge APPLICATIONS ·For power amplification PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SD1263 VCBO Collector-base voltage 2SD1263A 2SD1263 VCEO Collector-emitter voltage 2SD1263A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 35 150 -55~150 ℃ ℃ Open collector Open base 300 5 0.75 1.5 2 W V A A Open emitter 400 250 V CONDITIONS VALUE 350 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD1263 IC=30mA ,IB=0 2SD1263A IC=1A, IB=0.2A IC=1A ; VCE=10V VEB=5V; IC=0 2SD1263 2SD1263A 2SD1263 2SD1263A VCE=150V; IB=0 VCE=200V; IB=0 VCE=350V; VBE=0 VCE=400V; VBE=0 IC=0.3A ; VCE=10V IC=1A ; VCE=10V IC=0.5A; VCE=5V,f=10MHz CONDITIONS 2SD1263 2SD1263A MIN 250 TYP. MAX UNIT VCEO Collector-emitter voltage V 300 1.0 1.5 1.0 1.0 1.0 1.0 1.0 70 10 30 MHz 250 V V mA mA mA mA mA VCEsat VBE IEBO Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current ICEO Collector cut-off current ICES Collector cut-off current hFE-1 hFE-2 fT DC current gain DC current gain Transition frequency Switching times ton ts tf Turn-on time Storage time Fall time IC=1A;IB1=-IB2=0.1A VCC=50V 0.5 2 0.5 μs μs μs hFE-1 Classifications Q 70-150 P 120-250 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1263 2SD1263A Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1263 2SD1263A 4