2SD1264

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1264 2SD1264A DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB940/940A ·High collector to emitter voltage VCEO ·Large collector power dissipation PC APPLICATIONS ·For power amplification ·For TV vertical deflection output applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SD1264 VCEO Collector-emitter voltage 2SD1264A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ Open collector Open base 180 6 2 3 2 W V A A CONDITIONS Open emitter VALUE 200 150 V UNIT V Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD1264 VCEO Collector-emitter voltage 2SD1264A VCBO VEBO VCEsat VBE IEBO ICBO hFE-1 hFE-2 fT Collector-base voltage Emitter-base voltage Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current Collector cut-off current DC current gain DC current gain Transition frequency IC=50μA ,IE=0 IC=500μA ,IC=0 IC=0.5A, IB=50mA IC=0.4A ; VCE=10V VEB=4V; IC=0 VCB=200V; IE=0 IC=0.15A ; VCE=10V IC=0.4A ; VCE=10V IC=5mA ,IB=0 CONDITIONS 2SD1264 2SD1264A MIN 150 TYP. MAX UNIT V 180 200 6 1.0 1.0 50 50 60 50 20 MHz 240 V V V V μA μA IC=0.5A; VCE=10V,f=10MHz hFE-1 Classifications Q 60-140 P 100-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1264 2SD1264A Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1264 2SD1264A 4