2SD1265

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1265 2SD1265A DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For audio frequency power applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SD1265 VCBO Collector-base voltage 2SD1265A 2SD1265 VCEO Collector-emitter voltage 2SD1265A VEBO IC ICM IB Emitter-base voltage Collector current (DC) Collector current-peak Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open collector Open base 80 8 4 6 1 30 W V A A A Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD1265 VCEO(SUS) Collector-emitter sustaining voltage 2SD1265A VCEsat VBE ICBO IEBO hFE-1 hFE-2 Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=2A; IB=0.4A IC=1A ; VCE=3V VCB=20V; IE=0 VEB=8V; IC=0 IC=0.1A ; VCE=3V IC=1A ; VCE=3V IC=0.2A , L=25mH CONDITIONS 2SD1265 2SD1265A MIN 60 TYP. MAX UNIT V 80 1.0 1.2 30 1 40 30 160 V V μA mA hFE-2 Classifications Q 30-60 P 500-100 O 80-160 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1265 2SD1265A Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3