2SD1268

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1268 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·Complement to Type 2SB943 APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ 6 A 30 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 10mA ; IB= 0 IC= 2A; IB= 0.1A B 2SD1268 MIN 80 TYP. MAX UNIT V 0.5 1.5 10 50 45 60 30 260 V V μA μA IC= 2A; IB= 0.1A B VCB= 100V; IE= 0 VEB= 5V; IC= 0 IC= 0.1A; VCE= 2V IC= 0.5A; VCE= 2V IC= 0.5A; VCE= 10V; f= 10MHz MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 0.5A; IB1= -IB2= 50mA; VCC= 50V 0.5 2.5 0.15 μs μs μs hFE-2 classifications R 60-120 Q 90-180 P 130-260 isc Website：www.iscsemi.cn 2