2SD1271

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1271 2SD1271A DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB946/946A ・Low collector saturation voltage ・Good linearity of hFE ・Large collector current IC APPLICATIONS ・For power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter ・ ABSOLUTE MAXIMUM RATINGS AT Ta=25℃ SYMBOL PARAMETER 2SD1271 2SD1271A VCEO Collector-emitter voltage 2SD1271 2SD1271A VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open collector Open base 100 7 7 15 40 w V A A CONDITIONS VALUE 130 Open emitter 150 80 V V UNIT VCBO Collector-base voltage Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD1271 IC=10mA , IB=0 2SD1271A IC=5A ;IB=0.25A IC=5A ;IB=0.25A VCB=100V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=3A ; VCE=2V IC=0.5A ; VCE=10V CONDITIONS 2SD1271 2SD1271A MIN 80 TYP. MAX UNIT VCEO Collector-emitter voltage V 100 0.5 1.5 10 50 45 60 30 260 MHz V V μA μA VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Switching times ton ts tf Turn-on time Storage time Fall time IC=3A ;IB1=-IB2=0.3A VCC=50V 0.5 1.5 0.1 μs μs μs hFE-2 Classifications R 60-120 Q 90-180 P 130-260 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1271 2SD1271A Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1271 2SD1271A 4 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1271 2SD1271A 5