2SD1277

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1277 2SD1277A DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB951/951A ・High DC current gain ・High-speed switching APPLICATIONS ・For medium speed power switching PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SD1277 VCBO Collector-base voltage 2SD1277A 2SD1277 VCEO Collector-emitter voltage 2SD1277A VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-Peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open collector Open base 80 7 8 12 45 W V A A Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1277 2SD1277A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD1277 IC=30mA , IB=0 2SD1277A IC=4A; IB=8mA IC=4A ;IB=8mA VCB=60V ;IE=0 0.1 2SD1277A VCB=80V; IE=0 VEB=7V; IC=0 IC=8A ; VCE=3V IC=4A ; VCE=3V IC=0.5A; VCE=10V;f=1MHz 500 2000 20 10000 MHz 2 mA mA 80 1.5 2 V V CONDITIONS MIN 60 V TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SD1277 ICBO Collector cut-off current IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency Switching times ton tstg tf Turn-on time Storage time Fall time IC=4A ;IB1=8mA IB2=-8mA;VCC=50V 0.5 4.0 1.0 μs μs μs hFE-2 Classifications Q 2000-5000 R 4000-10000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1277 2SD1277A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3