2SD1290

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1290 DESCRIPTION ・With TO-3PN package ・Built-in damper diode ・High voltage ,high reliability ・Wide area of safe operation APPLICATIONS ・For color TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PN) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open collector VALUE 1500 5 3 10 50 130 -55~130 UNIT V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEsat VBEsat PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IE=500mA; IC=0 IC=2A; IB=0.75A IC=2A; IB=0.75A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 hFE ts tf VF DC current gain Storage time IC=2A ILeak=0.75A,LB=5μH Fall time Diode forward voltage IF=-4A,IB=0 IC=2A ; VCE=10V 3 3 MIN 5 TYP. 2SD1290 MAX UNIT V 5.0 1.5 50 1 8 7 1 2.2 V V μA mA μs μs V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1290 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3