2SD1291

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1291 DESCRIPTION ・With TO-3PN package ・Built-in damper diode ・High voltage ,high reliability ・Wide area of safe operation APPLICATIONS ・For color TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PN) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open collector VALUE 1500 5 3 13 65 130 -55~130 UNIT V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1291 MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.8A 1.5 V VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 50 μA 1 mA hFE DC current gain IC=2.5A ; VCE=10V 4 12 ts Storage time IC=2.5A ILeak=0.8A,LB=5μH 4 8 μs tf Fall time 1 μs VF Diode forward voltage IF=-4A,IB=0 2.2 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1291 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3