2SD1311

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1311 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@IC= 3A APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB B Base Current-Continuous Collector Power Dissipation @ Ta=25℃ 0.6 A 1.3 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1311 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 μA hFE DC Current Gain IC= 0.5A; VCE= 5V 40 200 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V 20 MHz isc Website：www.iscsemi.cn 2