2SD1313

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1313 DESCRIPTION ·With TO-3PL package ·High power dissipation ·High collector current ·High speed switching ·Low saturation voltage APPLICATIONS ·High power amplifier applications ·High power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PL) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 800 350 7 25 35 10 15 200 150 -55~150 UNIT V V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=15A ;IB=3A IC=15A ;IB=3A VCB=800V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=25A ; VCE=5V IC=1A ; VCE=10V f=1MHz;VCB=50V,f=1MHz 15 6 6 MIN 350 2SD1313 TYP. MAX UNIT V 1.0 1.7 1 1 V V mA mA MHz pF 170 Switching times ton tstg tf Turn-on time Storage time Fall time IC=15A ;IB1=-IB2=3A VCC≈200V,RL=13.3Ω 0.8 3.0 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1313 Fig.2 Outline dimensions (unindicated tolerance:±0.50mm) 3