2SD1336

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1336 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 4V ·High Speed Switching APPLICATIONS ·High power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ 10 A 2 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 35 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1336 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 2A; L= 10mH 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 8 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 12.5mA B 1.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 5A; IB= 12.5mA B 2.5 V μA Collector Cutoff Current VCB= 150V; IE= 0 100 hFE DC Current Gain IC= 5A; VCE= 4V 1500 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; f= 1MHz 20 MHz Switching times μs μs μs ton Turn-on Time IC= 5A, IB1= -IB2= 12.5mA; VCC= 50V 0.7 tstg Storage Time 4.0 tf Fall Time 1.5 isc Website：www.iscsemi.cn 2