2SD1348

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1348 DESCRIPTION ·With TO-126 package ·Complement to type 2SB986 ·High current capacity APPLICATIONS ·Power supplies,relay drivers,lamp drivers,electrical equipment PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 60 50 6 4 6 1.2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=1.0mA ;RBE=∞ IE=10μA ;IC=0 IC=10μA ;IE=0 IC=2.0A; IB=0.1A IC=2.0A; IB=0.1A VCB=40V; IE=0 VEB=4V; IC=0 IC=100mA ; VCE=2V IC=3A ; VCE=2V IC=50mA ; VCE=10V f=1MHz ; VCB=10V 100 40 150 25 MIN 50 6 60 TYP. 2SD1348 MAX UNIT V V V 0.5 1.2 1.0 1.0 560 V V mA mA MHz pF hFE-1 Classifications R 100-200 S 140-280 T 200-400 U 280-560 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1348 Fig.2 Outline dimensions 3