0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2SD1352

2SD1352

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SD1352 - isc Silicon NPN Power Transistor - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2SD1352 数据手册
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1352 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80(Min) ·Good Linearity of hFE ·Complement to Type 2SB989 APPLICATIONS ·Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IE Emitter Current-Continuous -4 A IB B Base Current-Continuous 0.4 A PC Collector Power Dissipation@ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 50mA; IB= 0 IE= 10mA; IC= 0 IC= 3A; IB= 0.3A B 2SD1352 MIN 80 5 TYP. MAX UNIT V V 0.45 1.0 1.5 1.5 30 0.1 V V μA mA IC= 3A ; VCE= 5V VCB= 80V; IE= 0 VEB= 5V; IC= 0 IC= 0.5A ; VCE= 5V IC= 3A ; VCE= 5V IE= 0; VCB= 10V; ftest= 1MHz IC= 0.5A ; VCE= 5V 3 40 15 240 50 90 8 pF MHz hFE-1 Classifications R 40-80 O 70-140 Y 120-240 isc Website:www.iscsemi.cn 2
2SD1352
1. 物料型号:2SD1352 2. 器件简介:isc Silicon NPN Power Transistor,具有以下特点: - 集电极-发射极击穿电压:最小80V - 良好的hFE线性 - 与2SB989型号互补 3. 引脚分配:TO-220C封装,引脚1为基极(BASE),引脚2为集电极(COLLECTOR),引脚3为发射极(EMITTER)。 4. 参数特性: - 集电极-基极电压(VCBO):80V - 集电极-发射极电压(VEO):80V - 发射极-基极电压(VEBO):5V - 集电极电流(Ic):连续4A - 发射极电流(IE):连续-4A - 基极电流(IB):连续0.4A - 集电极功耗(Pc):在Tc=25°C时30W - 结温(TJ):150°C - 存储温度范围(Tstg):-55~150°C 5. 功能详解应用信息:该器件为通用应用设计。 6. 封装信息:TO-220C封装,具体尺寸如下: - A:15.70~15.90 mm - B:9.90~10.10 mm - C:4.20~4.40 mm - D:0.70~0.90 mm - F:3.40~3.60 mm - G:4.98~5.18 mm - H:2.70~2.90 mm - J:0.44~0.46 mm - K:13.20~13.40 mm - L:1.10~1.30 mm - Q:2.70~2.90 mm - R:2.50~2.70 mm - S:1.29~1.31 mm - U:6.45~6.65 mm - V:8.66~8.86 mm
2SD1352 价格&库存

很抱歉,暂时无法提供与“2SD1352”相匹配的价格&库存,您可以联系我们找货

免费人工找货