2SD1352

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1352 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80(Min) ·Good Linearity of hFE ·Complement to Type 2SB989 APPLICATIONS ·Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IE Emitter Current-Continuous -4 A IB B Base Current-Continuous 0.4 A PC Collector Power Dissipation@ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 50mA; IB= 0 IE= 10mA; IC= 0 IC= 3A; IB= 0.3A B 2SD1352 MIN 80 5 TYP. MAX UNIT V V 0.45 1.0 1.5 1.5 30 0.1 V V μA mA IC= 3A ; VCE= 5V VCB= 80V; IE= 0 VEB= 5V; IC= 0 IC= 0.5A ; VCE= 5V IC= 3A ; VCE= 5V IE= 0; VCB= 10V; ftest= 1MHz IC= 0.5A ; VCE= 5V 3 40 15 240 50 90 8 pF MHz hFE-1 Classifications R 40-80 O 70-140 Y 120-240 isc Website：www.iscsemi.cn 2