2SD1378

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1378 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) ·Low Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 0.5A ·Complement to Type 2SB1007 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ 0.7 A 1.2 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1378 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 80 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA; IB= 0 B 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 5 V VCE(sat) ICBO Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 0.4 V μA μA Collector Cutoff Current VCB= 50V; IE= 0 0.5 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.5 hFE DC Current Gain IC= 0.1A; VCE= 3V 82 390 fT Current-Gain—Bandwidth Product IE= 50mA; VCE= 10V 120 MHz COB Output Capacitance IE= 0; VCB= 10V, ftest= 1MHz 10 pF hFE Classifications P 82-180 Q 120-270 R 180-390 isc Website：www.iscsemi.cn 2