2SD1380

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1380 DESCRIPTION ·With TO-126 package ·Complement to type 2SB1009 ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 40 32 5 2 10 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=1mA ;IB=0 IC=50μA ;IE=0 IE=50μA ;IC=0 IC=2.0A; IB=0.2A VCB=20V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=3V IE=-0.5A ; VCE=5V IE=0; f=1MHz ; VCB=10V 82 100 30 MIN 32 40 5 0.5 TYP. 2SD1380 MAX UNIT V V V 0.8 1 1 390 V μA μA MHz pF hFE Classifications P 82-180 Q 120-270 R 180-390 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1380 Fig.2 Outline dimensions 3