2SD1390

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1390 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 1 A ICP Collector Current-Pulse 2.5 A PC Collector Power Dissipation @ TC≤90℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1390 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1A B 1.5 V VCB= 750V; IE= 0 ICBO Collector Cutoff Current VCB= 1500V; IE= 0 50 μA 1 mA hFE DC Current Gain IC= 2A; VCE= 5V 2 7 tf Fall Time IC= 2.5A, IBend= 1.1A, LB= 10μH B 1 μs tstg Storage Time 11 μs isc Website：www.iscsemi.cn 2