2SD1391

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1391 DESCRIPTION ·With TO-3PN package ·High speed switching ·High voltage,high reliability ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 6 5 17 100 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1391 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=4.5A; IB=2A 2.0 V VBEsat Base-emitter saturation voltage IC=4.5A; IB=2A 1.3 V VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 50 μA 1.0 mA hFE DC current gain IC=3A ; VCE=10V 4 15 tf Fall time IC=4A IBend=1.5A,LB=10μH 1.0 μs ts Storage time 11 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1391 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3